4英寸半导体硅晶圆片生长方式/Growth:CZ, MCZ, FZ;等级/ Grade:Prime, Test, Dummy, etc;直径/ Diameter:4 inch / 100mm;厚度/ Thickness:50~ 3000um;表面处理/ Finish:As cut, lapped, etched, SSP, DSP, etc;晶向/ Orientation:(100) (11) (110) (21) (311) (511) (531), etc;晶向偏角/ Off cut:upto7deg;掺杂类型/ Type/Dopant:P/B, N/Phos, N/As, N/Sb, Intrinsic;电阻率/ Resistivity:CZ/MCZ: From 0.001 to 1000 ohm-cm;FZ : up to 20k ohm-cm;薄膜/ Thin films:★PVD: Al, Cu, Au, Cr, Si, Ni;, Fe, Mo. etc, Coating thicknesses up to 20.000A/土5 %;* LPCVD/PECVD: Oxide, Nitride, siC, etc,Coating thicknesses up to 200.000A/土3%;★Silicon epitaxial wafers and epitaxial services(SOS, GaN, GOI etc)。加工服务/ Processes:定制双抛、超薄、超平硅片/ DSP, ultra thin, ultra flat, etc。掏圆、减薄、切割/ Downsizing, back grinding, dicing ,etc。微纳加工/ MEMS。